Exploring Optoelectronic and Electrochemical Behavior of γ-CuI Thin films Prepared by Solid Iodination Process

Abstract

A simple and efficient solid iodination method is reported for the fabrication of p-type γ-CuI thin films. The structural, morphological, optical, electrical and electrochemical properties are studied in order to utilize γ-CuI thin films as effective hole transporting layer in solid state solar cells. The fabricated films exhibited p-type conductivity with resistivity of 7.0×10-2 Ωcm, hole concentration of the film was around 1019 cm-3 and the mobility was found to be in the range of 15.07 to 18.34 cm-2 V-1s-1. The cyclic voltammetry result shows a maximum specific capacitance of 43 mFcm-2 at scan rate of 10 mVs-1. The cyclic stability and capacitance retention was found to be 99.7%. These findings would assist γ-CuI film as a potential candidate for multiple applications, such as hole transporting material for solid state solar cells and electrochemical supercapacitors.